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| SI9806DY vishay siliconix document number: 70771 s-00652erev. c, 27-mar-00 www.siliconix.com faxback 408-970-5600 1 dual gate, n-channel 25-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) gate 1 25 0.027 @ v gs = 4.5 v 7.0 gate 1 25 0.038 @ v gs = 3.0 v 6.0 gate 2 25 0.400 @ v gs = 4.5 v 1.8 gate 2 0.570 @ v gs = 3.0 v 1.5 d g 1 s n-channel mosfet so-8 5 6 7 8 top view 2 3 4 1 g 2 g 1 d sd s d g 2 d parameter symbol gate 1 gate 2 unit drain-source voltage v ds 25 v gate-source voltage v gs 12 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 7.0 1.8 a continuous drain current (t j = 150 c) a t a = 70 c i d 5.7 1.5 a pulsed drain current i dm 40 4.0 a continuous source current (diode conduction) a i s 2.1 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol gate 1 or gate 2 unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. SI9806DY vishay siliconix www.siliconix.com faxback 408-970-5600 2 document number: 70771 s-00652erev. c, 27-mar-00 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 25 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) (g 1 = g 2 ) v ds = 5 v, v gs = 4.5 v 40 a dis os r i a r ds1( ) (g 1 = g 2 ) v gs = 4.5 v, i d = 7.0 a 0.021 0.027 drain source on state resistance a r ds1(on) (g 1 = g 2 ) v gs = 3.0 v, i d = 6.0 a 0.028 0.038 drain-source on-state resistance a r ds2(on) v g1s = 0 v, v g2s = 4.5 v, i d = 1.8 a 0.265 0.400 r ds2(on) v g1s = 0 v, v g2s = 3.0 v, i d = 0.3 a 0.340 0.570 forward transconductance a g fs v ds = 10 v, i d = 7.0 a 25 s diode forward voltage a v sd i s = 2.1 a, v gs = 0 v 0.71 1.1 v dynamic b total gate charge q g gate 1 gate 1 14 20 c total gate charge q g gate 1 v ds = 10 v, v gs(1, 2) = 4.5 v i d =70a gate 2 1.2 2.5 c gate - source charge q gs i d = 7 . 0 a gate 1 4.2 nc gate - source charge q gs gate 2 gate 2 0.3 nc gate - drain charge q gd gate 2 v ds = 10 v, v gs(1) = 0 v, v gs(2) = 4.5 vi d =18a gate 1 2.4 gate - drain charge q gd v , i d = 1 . 8 a gate 2 0.3 turn-on delay time t d(on) v10vr10 23 40 rise time t r v dd = 10 v, r l = 10 i1av 45vr6 30 60 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 46 90 ns fall time t f 18 30 source-drain reverse recovery time t rr i f = 2.1 a, di/dt = 100 a/ s 60 120 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI9806DY vishay siliconix document number: 70771 s-00652erev. c, 27-mar-00 www.siliconix.com faxback 408-970-5600 3 0 8 16 24 32 40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 500 1000 1500 2000 2500 3000 0 4 8 12 16 20 0.4 0.8 1.2 1.6 2.0 50 0 50 100 150 0 8 16 24 32 40 0246810 0 0.9 1.8 2.7 3.6 4.5 03691215 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0 8 16 24 32 40 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 5 thru 3 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 7 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 7 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 3 v v gs = 4.5 v 25 c 2 v 2.5 v SI9806DY vishay siliconix www.siliconix.com faxback 408-970-5600 4 document number: 70771 s-00652erev. c, 27-mar-00 0 20 40 60 80 100 power (w) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 0 50 100 150 0 0.02 0.04 0.06 0.08 02468 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 t j = 150 c t j = 25 c i d = 7 a i d = 250 a 0.01 40 1 10 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 30 0.1 1 10 10 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm SI9806DY vishay siliconix document number: 70771 s-00652erev. c, 27-mar-00 www.siliconix.com faxback 408-970-5600 5 0 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 gate charge gate-to-source voltage (v) q g total gate charge (nc) v gs v ds = 10 v i d = 1.8 a 0 0.2 0.4 0.6 0.8 1.0 0 0.8 1.6 2.4 3.2 4.0 on-resistance vs. drain current on-resistance ( r ds(on) w) i d drain current (a) v gs = 3 v v gs = 4.5 v 0 1 2 3 4 5 0246810 output characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs = 5 thru 3.5 v 3 v 2 v 2.5 v 0 0.2 0.4 0.6 0.8 1.0 02468 on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) w) v gs gate-to-source voltage (v) i d = 1.8 a |
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